Nonvolatile static random access memory based on spin-transistor architecture

摘要

The authors proposed and computationally analyzed nonvolatile static random access memory (NV-SRAM) architecture using a new type of spin transistor comprised of a metal-oxide-semiconductor field-effect transistor (MOSFET) and magnetic tunnel junction (MTJ) that is referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit approach to reproduce the functions of spin transistors, based on recently progressed magnetoresistive random access memory technology. The proposed NV-SRAM cell can be simply configured by connecting two PS-MOSFETs to the storage nodes of a standard SRAM cell.