首页> 外文会议>Annual Conference on Magnetism and Magnetic Materials >Perpendicular anisotropy and oscillatory interlayer coupling in Fe_(0.5)Co_(0.5)/Rh/Fe_(0.5)Co_(0.5) bilayers on Rh(001)
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Perpendicular anisotropy and oscillatory interlayer coupling in Fe_(0.5)Co_(0.5)/Rh/Fe_(0.5)Co_(0.5) bilayers on Rh(001)

机译:在RH(001)上的Fe_(0.5)CO_(0.5)CO_(0.5)/ RH / FE_(0.5)二层次(0.5)二层(0.5)双层的垂直各向异性和振荡中间层耦合

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Tetragonal distortion in Fe_(0.5)Co_(0.5) alloy films grown epitaxially on Rh(001) substrates results in an easy magnetization axis perpendicular to the film plane up to the thickness of 17 ML. The distortion is supported by a Rh-overlayer; thus the strong perpendicular anisotropy can be kept when another Fe_(0.5)Co_(0.5) film is grown on top of the Rh/Fe_(0.5)Co_(0.5)/Rh(001) structure. Depending on the thickness of the Rh spacer, the top and bottom Fe_(0.5)Co_(0.5) films are either ferro- or antiferromagnetically coupled. The net magnetization of the antiferromagnetically coupled Fe_(0.5)Co_(0.5)/Rh/Fe_(0.5)Co_(0.5) bilayer switches at the field which depends on the difference between magnetizations of both the Fe_(0.5)Co_(0.5) layers. The final covering of the Fe_(0.5)Co_(0.5)/Rh/Fe_(0.5)Co_(0.5)/Rh(001) structure with Rh increases the switching field. The effect is explained by a locally enhanced magnetization in the Rh/Fe_(1-x)Co_x interfaces.
机译:在RH(001)衬底上外延生长的Fe_(0.5)CO_(0.5)合金膜中的四边形变形导致垂直于薄膜平面的易磁化轴,厚度为17mL。 rh覆盖器支持失真;因此,当在RH / FE_(0.5)CO_(0.5)/ RH(001)结构的顶部生长另一FE_(0.5)CO_(0.5)膜时,可以保持强的垂直各向异性。根据Rh间隔物的厚度,顶部和底部Fe_(0.5)CO_(0.5)膜是铁或反铁磁体耦合的。反铁磁耦合FE_(0.5)CO_(0.5)/ RH / FE_(0.5)CO_(0.5)双层切换的净磁化在该字段处切换,这取决于FE_(0.5)CO_(0.5)层的磁化之间的差异。使用RH的FE_(0.5)CO_(0.5)/ RH / FE_(0.5)CO_(0.5)/ RH(001)结构的FE_(0.5)/ RH / FE_(0.5)结构的最终覆盖增加了开关场。通过RH / FE_(1-X)CO_X接口中的局部增强的磁化来解释该效果。

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