首页> 外文会议>Annual Conference on Magnetism and Magnetic Materials >Magnetic properties of thin hard/soft-stacked dot arrays with a large uniaxial magnetic anisotropy
【24h】

Magnetic properties of thin hard/soft-stacked dot arrays with a large uniaxial magnetic anisotropy

机译:具有大单轴磁各向异性的薄硬/软堆叠点阵列的磁性

获取原文

摘要

Magnetic properties of hard/soft stacked dot arrays consisting of thin Co/Pt superlattice hard layers (3.6 nm in thickness, uniaxial magnetic anisotropy, K_u= 1.3 X 10~7 erg/cm~3) and Co soft layers, with dot diameters of 30-40 nm, were investigated as functions of Co soft layer thickness and the interfacial exchange coupling between the hard and soft layers. Pt was used as the control layer of the interfacial exchange coupling, and Co soft layers were sandwiched with Pt layers to induce surface anisotropy on the Co soft layers. The remanence coercivity, H_r, was 2.7 kOe for Co/Pt(3.6 nm)/Co(4 nm) stacked dot arrays and 3.2 kOe for Co/Pt(3.6 nm)/Pt(1.2 nm)/Co(3 nm) stacked dot arrays, and these values were less than half that of single hard layer dot arrays (7.1 kOe). H_r was nearly constant in the PHI range from 0 deg to about 45 deg (PHI is the applied field angle from the easy axis), and increased significantly as PHI increased further, as theoretically predicted. Hard/soft dot arrays maintained a relatively large K_u due to the surface anisotropy of the Co soft layers. It was suggested that the ratio of magnetic energy to the thermal energy, K_u~(eff) V/kT, for Co/Pt(3.6 nm)/Pt(1.2 nm)/ Co(3 nm) hard/soft dot arrays was 1.5 times larger than that for Co/Pt(3.6 nm) single dot arrays because of the relatively large K_u.
机译:硬/软堆叠点阵列的磁性特性由薄的CO / PT超晶格硬层(厚度为3.6nm,单轴磁各向异性,K_U = 1.3×10〜7 erg / cm〜3)和CO软层,带点直径研究了30-40nm,作为CO软层厚度的函数和硬度和软层之间的界面交换耦合。用作界面交换偶联的控制层,将CO软层夹在CT层中,以诱导CO软层的表面各向异性。剩磁矫顽力H_R为CO / Pt(3.6nm)/ CO(4nm)的2.7koe堆叠点阵列和3.2只koe for co / pt(3.6nm)/ pt(1.2nm)/ co(3nm)堆叠点阵列,这些值低于单个硬层点阵列的一半(7.1只koe)。 H_R在PHI范围内几乎是恒定的,从0°至约45°(PHI是从容易轴的施加的场角),并且在理论上预测,PHI进一步增加,显着增加。由于CO软层的表面各向异性,硬/软点阵列保持相对大的K_U。有人建议,磁能与热能的比率,K_U〜(EFF)v / kt,用于CO / Pt(3.6nm)/ pt(1.2nm)/ co(3nm)硬/软点阵列为1.5由于相对较大的K_U,与CO / PT(3.6nm)单点阵列大的时间。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号