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Switching behavior of La_(1-x)Ca_xMnO_3 thin films grown on SrTiO_3 substrates

机译:SRTIO_3基板上生长的LA_(1-x)CA_XMNO_3薄膜的切换行为

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We report the switching behavior of resistive states induced by current flowing in La_(1-x)Ca_xMnO_3 films. The transport behavior upon treatments by applying a large dc current has been investigated in the absence of magnetic field. A switching from low to high resistive state was found upon applying a large dc current for the both compositions. The critical currents for the switching are 10.5 mA (density of 2.3 X 10~3 A/cm~2) and 6.7 mA (density of 1.6 X 10~3 A/cm~2) for compositions x=0.2 and 0.3, respectively. Our repeated measurements indicate that the high resistive state appeared in the film x=0.2 is much stable. Exposing the sample in air and room temperature does not cause any change of the transport properties. However, for the film with x=0.3, the induced high resistive state behaves with unstable characteristics. Keeping the sample at a low temperature of 20 K, a relaxation to a higher resistive state takes place. The mechanism of phase separation was taken into account in the interpretation of the observed phenomena.
机译:我们报告了在LA_(1-X)CA_XMNO_3薄膜中流动的电流引起的电阻状态的切换行为。在没有磁场的情况下已经研究了通过施加大型DC电流的处理时的运输行为。在为两种组合物施加大型DC电流时发现从低到高电阻状态的切换。切换的关键电流为10.5 mA(密度为2.3×10〜3A / cm〜2),6.7mA(密度为1.6×10〜3A / cm〜2),分别为组合物x = 0.2和0.3。我们的重复测量表明,在膜X = 0.2中出现的高电阻状态是稳定的。暴露在空气中的样品和室温不会导致运输性能的任何变化。然而,对于具有x = 0.3的薄膜,诱导的高电阻状态表现出不稳定的特性。将样品保持在20 k的低温下,弛豫到更高的电阻状态。在观察到的现象的解释中考虑了相分离的机制。

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