首页> 外文期刊>Journal of Crystal Growth >Growth and structure properties of La_(1-x)Sr_xMnO_(3-δ) (x=0.2, 0.3, 0.45) thin film grown on SrTiO_3 (001) single-crystal substrate by laser molecular beam epitaxy
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Growth and structure properties of La_(1-x)Sr_xMnO_(3-δ) (x=0.2, 0.3, 0.45) thin film grown on SrTiO_3 (001) single-crystal substrate by laser molecular beam epitaxy

机译:通过激光分子束外延在SrTiO_3(001)单晶衬底上生长La_(1-x)Sr_xMnO_(3-δ)(x = 0.2、0.3、0.45)薄膜的生长和结构特性

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摘要

La_(1-x)Sr_xMnO_(3-δ) (LSMO) thin films have been grown on SrTiO_3 (001) single-crystal substrates using the laser molecular beam epitaxy (MBE) technique. The two-dimensional layer-by-layer growth was in-situ monitored by reflection high-energy electron diffraction (RHEED). Kinetic growth with surface relaxation was also observed, and crystallinity of the thin films was investigated by high-resolution X-ray diffraction. Results of 2θ-ω scans revealed a strong correlation between out-of-plane lattice constant and oxygen content as well as strontium doping concentration. However, further analysis of rocking curve measurements around (0 02) plane of thin films grown under different oxygen pressure (P_(O2)) shown the effects of oxygen content on the crystal structure. An exceptionally low full-width at half-maximum (FWHM) of 0.02° was measured from the sample grown at P_(O2) of 5.0 Pa, indicating the almost perfect epitaxial growth of LSMO thin films.
机译:La_(1-x)Sr_xMnO_(3-δ)(LSMO)薄膜已使用激光分子束外延(MBE)技术在SrTiO_3(001)单晶衬底上生长。通过反射高能电子衍射(RHEED)原位监测二维逐层生长。还观察到了具有表面弛豫的动力学生长,并且通过高分辨率X射线衍射研究了薄膜的结晶度。 2θ-ω扫描的结果表明面外晶格常数与氧含量以及锶掺杂浓度之间存在很强的相关性。然而,进一步分析在不同氧气压力(P_(O2))下生长的薄膜的(0 02)平面附近的摇摆曲线测量结果,显示了氧气含量对晶体结构的影响。从在5.0 Pa的P_(O2)下生长的样品测得的0.02°的半峰全宽(FWHM)异常低,表明LSMO薄膜几乎完美的外延生长。

著录项

  • 来源
    《Journal of Crystal Growth》 |2009年第12期|3289-3294|共6页
  • 作者单位

    Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore;

    School of Engineering, Temasek, Polytechnic, 21 Tampines Avenue, Singapore 529757, Republic of Singapore;

    Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore;

    Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore;

    Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore;

    Microelectronics Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. High resolution X-ray diffraction; A1. Stresses; A3. Laser epitaxy; A3. Atomic layer epitaxy; B1. Manganites; B1. Perovskites;

    机译:A1。高分辨率X射线衍射;A1。压力;A3。激光外延;A3。原子层外延;B1。锰矿;B1。钙钛矿;
  • 入库时间 2022-08-17 13:19:51

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