Simulating Power Semiconductor Devices Using Variable Model Levels

摘要

Model levels for power semiconductor devices are described. For the case of an IGBT and p-i-n diode models, various model levels are presented. First-of-all, an averaged model that captures switching and conduction losses is developed. Then two different behavioral models are developed, which give different levels of accuracy in reproducing switching waveforms. A previously developed physics-based IGBT and diode model is used as a reference for these less accurate, but more computationally efficient models. These models are compared in terms of switching waveform accuracy, switching and conduction loss predictions, model complexity and simulation time.