Simulating Power Semiconductor Devices Using Variable Model Levels

摘要

Model levels for power semiconductor devices arerndescribed. For the case of an IGBT and p-i-n diode models, variousrnmodel levels are presented. First-of-all, an averaged model thatrncaptures switching and conduction losses is developed. Then tworndifferent behavioral models are developed, which give differentrnlevels of accuracy in reproducing switching waveforms. A previouslyrndeveloped physics-based IGBT and diode model is used as arnreference for these less accurate, but more computationally efficientrnmodels. These models are compared in terms of switching waveformrnaccuracy, switching and conduction loss predictions, modelrncomplexity and simulation time.