首页> 外文会议>International Congress on Electrocardiology >ENDOCARDIAL ELECTROANATOMICAL SUBSTRATE AND CATHETER ABLATION IN PATIENTS WITH NONISCHEMIC CARDIOMYOPATHY AND MONOMORPHIC VENTRICULARTACHYCARDIA
【24h】

ENDOCARDIAL ELECTROANATOMICAL SUBSTRATE AND CATHETER ABLATION IN PATIENTS WITH NONISCHEMIC CARDIOMYOPATHY AND MONOMORPHIC VENTRICULARTACHYCARDIA

机译:非缺血性心肌病患者的心内膜电涂层基质和导管消融患者和单声腔脑膜心房

获取原文

摘要

The purpose of this study was to examine the relationship between the reentrant circuits of ventricular tachycardia (VT) and an abnormal myocardium in arrhythmogenic right ventricular cardiomyopathy (ARVC) and cardiac sarcoidosis (SARC) by using the electro-anatomical mapping system (CARTO), and to assess the feasibility of the establishment of a block line in the reentrant circuit isthmus guided by CARTO. Methods & Results An EP study and catheter ablation(CA) were performed in 17 ARVD pattents(13 men, 47+-17yr) and 5 SARC patients(3 men, 55+-13yr) using CARTO. Endocardial mapping during sinus rhythm(SR) was performed in all patients to evaluate the relationship between the site of abnormal electrograms and the reentrant circuits. A total of 26 VTs (13 stable, 13 unstable) were induced in the ARVD group and 5 VTs(4 stable 1 unstable) in the SARC group. ARVD: The reentrant circuit and critical site for the CA were identified in 10 of 13 stable VTs(6 reentrant and 4 focal) in the ARVD group. The Activation pattern during the reentrant VT exhibited figure-of-8 reentry in 4 VTs and single-loop-reentry in 2. All VTs were terminated by several RF applications (average 11+-6; 40W*60sec) at the critical isthmus of the circuit. Those isthmi were located predominantly around the tricuspid annulus (TA) in the ARVD group.
机译:本研究的目的是检查心室性心动过速(VT)(VT)和心血生右心室心肌病(ARVC)和心脏结石病(SARC)的异常心肌的关系,通过使用电解剖学映射系统(Carto),并评估在由CARTO引导的重入电路斯廷斯中建立块线的可行性。方法和结果通过使用Carto,在17个ARVD守则(13名男性,47 + -17岁)和5名SARC患者(3人,55 + -13yr)中进行EP研究和导管消融(CA)。在所有患者中进行窦性心律(SR)的心内膜映射,以评估异常电导图和倒退电路的部位之间的关系。在ARVD组中诱导总共26 vts(13稳定,13个不稳定),在SARC组中诱导5 vts(4稳定1个不稳定)。 ARVD:在ARVD组的13个稳定VTS(6个旋转率和4个焦点)中,鉴定了Ca的重圈电路和关键部位。在临界峡部(临界峡部)的临界峡部,雷入vt在4VTS和单环再入物中展示了8 vts和单环再入物中的8个再入物。电路。这些isthmi主要位于ARVD组的三尖瓣环(TA)周围。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号