首页> 外文会议>International Conference on Advanced Ceramics and Composites >HIGH THERMAL CONDUCTIVITY AND HIGH STRENGTH SINTERED REACTION - BONDED SILICON NITRIDE CERAMICS FABRICATED BY USING LOW GRADE Si POWDEE
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HIGH THERMAL CONDUCTIVITY AND HIGH STRENGTH SINTERED REACTION - BONDED SILICON NITRIDE CERAMICS FABRICATED BY USING LOW GRADE Si POWDEE

机译:使用低等级Si Powdee制造的高导热率和高强度烧结反应键合氮化硅氮化硅陶瓷

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Sintered reaction bonded silicon nitrides (SRBSNs) were fabricated from commercially available low grade Si powder containing 1.6 mass % of impurity oxygen and 500 ppm of metallic impurities. Powder compacts of the raw Si powder doped with Y_2O_3 and MgO/MgSiN_2 as sintering additives were nitrided at 1400°C for 8h under a N2 pressure of 0.1 MPa, followed by post-sintering at 1900°C for 6h under a N2 pressure of 0.9 MPa. The SRBSN with Y_2O_3 and MgO as sintering additives had four-point bending strength of about 700 MPa, but lower thermal conductivity of about 89 W/m/K. Thermal conductivity could be improved to over 100 W/m/K without degrading bending strength by replacing MgO with MgSiN_2.
机译:烧结反应键合氮化硅(SRBSNS)由含有1.6质量%的杂质氧和500ppm金属杂质的市售低级Si粉末制成。粉末块掺杂有Y_2O_3和MgO / MgSin_2作为烧成添加剂的粉末块在1400℃下氮化8小时,在0.1MPa的N 2压力下,然后在0.9的N 2压力下在1900℃下烧结6小时MPA。具有Y_2O_3和MgO作为烧结添加剂的SRBSN具有约700MPa的四点弯曲强度,但较低的导热率为89W / k。通过用Mgsin_2替换MgO,可以将导热率提高到超过100W / k以上而不会降低弯曲强度。

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