Numerical simulation has been very useful in predicting the temperature distribution and subsequent growth kinetics in various vapor growth processes and can augment difficult or inadequate in situ measurements. Multidimensional models of silicon carbide (SiC) sublimation growth systems of varying levels of complexity have been developed to aid in the design, manufacture, and optimization of these growth systems. Since it is well known that SiC defect density and growth rate are strongly influenced by temperature distribution, an accurate assessment of this temperature distribution is required.
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