Paraelectric Permittivity And Temperature Dependence Of Resistivity And Hall Coeficient In High-T_(c) Metal Oxides

摘要

Local electric fields in the metal oxide superconductors, which are generally close to the metal-insulator phase transition and possess the very short length of the mean free path for current carriers, order of a lattice constant, can result in the paraelectric permittivity for bound charges (soft dipoles), which obeys the Curie law. The Hall effect and dc resistivity temperature behaviours are explained here by the model of the paraelectric crystal close to the point of the Mott-Hubbard instability, in the ground state of which the current is carried by a liquid of boson-like pairs of carriers in upper and lower Hubbard bands. Fermion-like carriers, temperature excited over the energy of boson-like pair dissociation (pseudo gap), explain the temperature behaviour of Hall effect. Available data are compared with the model.