A 1-5 GHz UWB Low Noise Amplifier in 0.18μm CMOS

摘要

A 1-5 GHz ultra-wideband CMOS low-noise amplifier (LNA) is presented. A common-gate topology is adopted for the input stage to achieve wideband input matching, while a cascode stage is used as the second stage to provide power gain at high frequencies. By using two inductors in the LNA, a small chip area is obtained. The LNA has been fabricated in a standard 0.18μm CMOS technology. The measured maximum power gain is 13.7 dB, and the noise figure is 5.0-6.5 dB in the frequency band of 1-5 GHz. The measured third order (two-tone) input intercept point (IIP3) is -9.8 dBm at 4 GHz. The LNA consumes 9 mW with a 1.8 V supply, and occupies an area of 0.78 mm~2.