HIGHLY-POLARIZED ELECTRON EMISSION FROM STRAIN COMPENSATED InAlGaAs -GaAsP SUPERLATTICES

摘要

New results from experimental and theoretical studies of spin-polarized electron emission from InAlGaAs-GaAsP superlattice photocathodes with opposite strain in the quantum well and barrier layers are presented. The measured values of maximum polarization and quantum yield for the structure with a 0,18 jum-thick working layer are close to the best results reported for strained superlattice pho-tocathode structures, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.