DETECTORS WITH SCHOTTKY BARRIER ON THE BASIS OF A2B6 SEMICONDUCTORS

摘要

The issues of manufacturing technology of Schottky diodes based on promising compounds A2B6 and their current-voltage characteristics for metallic contacts of Ni, Pt, Pd are discussed. The current-voltage characteristics of experimental samples of photodiodes based on ZnSe under the influence of optical radiation are shown. It was found that the sensitivity of the diodes with platinum contacts is 2-3 times higher than the diodes with contacts made of nickel and palladium under UV irradiation. The analysis of collection efficiency of nonequilibrium carriers in the compounds of ZnSe, ZnTe, CdSe, CdTe is presented.