Junction formation on silicon by thermal diffusion of phosphorus has gained increasing interest in the photovoltaic field because of an overall thermal budget reduction. It has been successfully used on monocrystalline silicon and multi-crystalline silicon. In the first part of this paper, we report the influence of the diffusion temperature, time, and especially the diffusion profile (Gaussian or Erfc distribution) was investigated, and characterized by sheet resistance measurements with the four-point-probe method, spreading resistance profiling (SRP). In the second part, we discuss conversion efficiency controlled by junction depth.
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