Effect of Varying the PECVD Microwave Power in SiN_x:H Deposition on the Effective Lifetime in Silicon

摘要

This paper describes a study of the dependence of carrier lifetimes in mono- and multicrystalline (mc) silicon (Si) on the microwave (MW) plasma excitation power used during plasma enhanced chemical vapour deposition of hydrogenated Si nitride films. In as-deposited films, the effective lifetime (τ_(eff)) was relatively low. However, τ_(eff) increased when the MW power was increased. After annealing, τ_(eff) increased significantly, especially for higher MW powers. A near doubling of the bulk lifetime of mc-Si was observed at a MW power of 150W. The role of hydrogen in the observed passivation is discussed.