Boron-doped ZnO Films for A-Si Solar Cell Grown by MOCVD

摘要

In this paper, microstructure and photo-electronic properties of ZnO films grown by metal organic chemical vapor deposition at different B_2H_6 flow rate were investigated. By optimizing the condition, the low sheet resistance (30Ω/□) and high transparency (> 85%) in the range of visible light and infrared and 17.8cm~2/Vs mobility have been obtained for 7000A thick ZnO film deposited on 20cmx20cm substrate at low temperature of 170°C. After ZnO film as back contact was applied in solar cell, Jsc can be effectively improved nearly 3mA and a 9.1 % efficiency was obtained in large area (20 cm x 20 cm) a-Si integrated solar cell.