机译:硼掺杂量对LPCVD技术生长的ZnO:B膜性能的影响及其与A-Si:H /μC-Si:H串联太阳能电池的相关性及其相关性
The Center of Collaboration and Innovation Jiangxi University of Technology Nanchang 330098 Jiangxi China;
Institute of Business Administration Jiangxi University of Technology Nanchang 330098 Jiangxi China;
The Center of Collaboration and Innovation Jiangxi University of Technology Nanchang 330098 Jiangxi China;
The Center of Collaboration and Innovation Jiangxi University of Technology Nanchang 330098 Jiangxi China;
The Center of Collaboration and Innovation Jiangxi University of Technology Nanchang 330098 Jiangxi China;
3D SolarTech Co. Ltd. Yuyao 315380 Zhejiang China;
3D SolarTech Co. Ltd. Yuyao 315380 Zhejiang China;
机译:氢退火ZnO:B通过LPCVD技术生长作为TCO,用于提高A-Si:H / Mu C-Si:H串联太阳能电池的转化效率
机译:H_2O / DEZ比例对用于a-Si:H /μc-Si:H串联太阳能电池的LPCVD ZnO:B膜的影响
机译:通过金属有机化学气相沉积法制备的用于双面a-Si:H / c-Si异质结太阳能电池的掺硼氧化锌薄膜
机译:MOCVD生长的A-Si太阳能电池用掺硼ZnO薄膜
机译:使用两个靶脉冲激光沉积法生长的P掺杂钛酸锶用于薄膜太阳能电池
机译:通过二维纳米图案化光敏层提高性能的薄膜a-Si:H /μc-Si:H串联太阳能电池
机译:p型a-si:H / ZnO:al和μc-si:H / ZnO:al薄膜太阳能电池结构 - 比较硬X射线光电子能谱研究