Reduction of threading dislocation density using in-situ SiNx interlayers

摘要

In-situ SiNx interlayers (ILs) have been used in order to reduce the density of threading dislocations (TDs) in MOVPE grown GaN and the mechanisms of TD reduction have been investigated by transmission electron microscopy (TEM). It was found that, such ILs are very efficient for reducing the density of all types of TDs via a mechanism of TD bending through 90° and subsequently forming loops, depending on the availability of the right partner. A new mechanism for bending of TDs through 90° is briefly discussed.