首页> 外文会议>International Symposium on Processing and Fabrication of Advanced Materials >Sintering and Dielectric Characteristics of 0.3SrBi_4Ti_4O(15)-O.7SrBi_2Ta_(1.8)V_(0.2)O_9 Ceramic
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Sintering and Dielectric Characteristics of 0.3SrBi_4Ti_4O(15)-O.7SrBi_2Ta_(1.8)V_(0.2)O_9 Ceramic

机译:0.3SRBI_4TI_4O(15)-O.7SRBI_2TA_(1.8)V_(0.2)O_9陶瓷的烧结和介电特性为0.3SRBI_4TI_4O(15)-O.7SRBI_2TA_(1.8)

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SrBi_2Ta_(1.8)V_(0.2)O_9 and SrBi_4Ti_4O(15), tow layer structured bismuth compound ferroelectric materials were mixing before calcining and after calcining at 80()l>C. The influence of calcining condition on the dielectric characteristics and crystal structure of 0.3 SrBi_4Ti_4O(15)-0.7SrBi_2Ta_(1.8)V_(0.2)O_9 ceramics was developed with the aid of X-ray diffraction patterns, scanning electronic micrograph (SEM), and dielectric-temperature curves. From SEM observations, the sintered ceramics revealed a layered structure independent of calcining condition. Dielectric properties were investigated in the temperature of 60°C~ 600°C at 1MHz. It was found that the calcining condition and sintering temperatures had apparent influence on the crystal structure and the maximum dielectric constant (revealed at Curie temperature).
机译:SRBI_2TA_(1.8)V_(0.2)O_9和SRBI_4TI_4O(15),丝波层结构铋化合物复合铁电材料在煅烧之前和80()L> C煅烧后混合。借助于X射线衍射图案,借助于X射线衍射图,扫描电子显微照片(SEM)和扫描电子显微照片和扫描电子显微照片,扫描电子显微照片(SEM)和校正条件介电温度曲线。根据SEM观察,烧结陶瓷揭示了独立​​于煅烧条件的分层结构。在1MHz的温度下在60℃〜600℃的温度下研究介电性能。发现煅烧条件和烧结温度对晶体结构和最大介电常数(在居里温度下显示)具有明显的影响。

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