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A novel polishing mechanism used in manufacturing ultra-high uniformity gold solder bump

机译:一种用于制造超高均匀金焊料凸块的新型抛光机构

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The plating-based gold solder bumps with ultra-high average uniformity across the entire 4 inch wafer by using an unprecedented polishing process are fabricated in this paper. This sophisticated polisher uses the same two polishing mechanisms, mechanical and chemical forces, as those traditionally applied to polish wafer surface with the chemical mechanical polishing (CMP) equipment, but has relatively far less cost than it. Not only can we acquire uniform surface among the solder bumps after plating, but we are able to largely improve the bumps' surface roughness, both of which are two key elements for enhancing assembly yield rate and solving the difficulty in stripping thick photoresist as well. Meanwhile, we employ some compatible measuring instruments such as a surface profile instrument (/spl alpha/-Step), an optical microscope (OM) with convertible magnification and a scanning electron microscope (SEM) to identify and evaluate the solder bumps' thickness and surface morphology after each procedure for the sake of strictly controlling their quality. The final results indicate that the poor solder bumps with approximately 9.24% in deviation after plating is narrowed down as accurate as within 3.98% across the entire wafer after polishing, representing the uniformity significantly improved to 2.5 times in comparison with those without using any treatment after electroplating. Even on some local area (die), the uniformity can be accurately controlled up to 1.5%. The surface roughness, on the other hand, has been advanced from the original Ra 0.6 after electroplating to near Ra 0.03 after polishing.
机译:本文制造了通过使用前所未有的抛光工艺的整个4英寸晶片上具有超高平均均匀性的基于电镀的金焊料凸块。这种复杂的抛光机使用了相同的两个抛光机构,机械和化学力,因为传统上应用于具有化学机械抛光(CMP)设备的波兰晶片表面的那些,但具有比其更少的成本。在电镀后,我们不仅可以在焊料凸块中获得均匀的表面,但我们能够在很大程度上提高凸块表面粗糙度,两者都是用于增强组装率率的两个关键元件,并求解剥离厚的光致抗蚀剂的难度。同时,我们采用了一些兼容的测量仪器,如表面轮廓仪器(/ SPL alpha / -step),光学显微镜(OM),具有可转换倍率和扫描电子显微镜(SEM),以识别和评估焊料凸块的厚度和在每种程序后表面形态,以严格控制其质量。最终结果表明,在抛光之后,电镀后偏差大约9.24%的偏差较差的耐焊料凸块在整个晶片上的3.98%内,表示均匀性显着提高到2.5倍,与那些后电镀。即使在一些局部区域(DIE),均匀性也可以精确控制高达1.5%。另一方面,表面粗糙度已经从原始RA 0.6前进,然后在抛光后电镀到接近RA 0.03后。

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