Design of a Novel Three-Valued Static Memory Using Schottky Barrier Carbon Nanotube FETs

摘要

This paper proposes a novel three-state memory using scaled Scltottky-barrier carbon nanotube field effect transistors (SB CNFETs). The design utilizes the inherent ambipolar device characteristics of the SB CNFET. Simulation results show approx 37 percent area reduction and -30 percent reduction of total power in a 64KB memory array.