Patterning nanoscale resist features on topography substrates using the 2-step NERIME FIB TSI process

摘要

The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process was previously reported as a suitable technique for patterning nanometer scale features in DNQ/novolak based resists, od a range of planar substrate materials. We demonstrate, for the first time, 90nm resist features patterned using Shipley SPR6600 resist and the 2-step NERIME process over substrate topography. The resultant resist features exhibit excellent profile control across topography, and demonstrate the suitability of the 2-step NERIME process as a nanolithography technique for applications requiring nanometer resist critical dimension (CD) and profile control over substrate topography.