Theoretical Analysis of Electron Statistics for n-Type Diamond

摘要

In order to understand carrier statistics in phosphorus-doped n-type diamond, electron statistics involving compensation and deep-dopant effect are theoretically analyzed. For n-diamond with a compensation ratio (c) larger than 1X10~(-4), the electron concentration (n) at room temperature (RT) is insensitive to the donor concentration (N_D) and reduced with increasing the c value. On the other hand, for diamond with a c value smaller than 1X10~(-4), the n value at RT increases with increasing the N_D value and is insensitive to the c value. Similarly, the length of Debye tailing (/,n) at RT is reduced with increasing the c value for n-diamond with c>1X10~(-4) and is insensitive to the c value for n-diamond with c<1X10~(-4). However, it is found that an increase of temperature is effective to increase the n value and to reduce the lambda_n value. The n value as large as 10~(15) cm~(-3) and the ^ value as small as 100 nm are expected to be achieved at an elevated temperature of 473 K.