Metal Bonding in SiC Based Substrates

机译：基于SiC的基材中的金属键合

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QuaSiC ~(TM) substrates can be obtained by transferring a single crystal SiC layer onto a poly SiC substrate using the Smart Cut ~(TM) technology. The structure evolution of metal bonding (W-Si silicide) layer has been investigated by Transmission Electron Microscopy and X-ray diffraction. Results indicate that the metal bonding film is made of W_5Si_3. The film is discontinuous and strained. Annealing releases stress at least partially.

机译：可以使用智能切割〜（TM）技术将单晶SiC层转移到多晶硅基板上来获得准〜（TM）衬底。通过透射电子显微镜和X射线衍射研究了金属键合（W-Si硅化物）层的结构演变。结果表明金属粘合膜由W_5SI_3制成。薄膜是不连续和紧张的。退火至少部分地释放应力。

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《European Conference on Silicon Carbide and Related Materials》|2005年||共4页
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I. Matko; B. Chenevier; R. Madar;
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中图分类材料;
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QuaSiC ~(TM) substrates; metal bonding; Transmission Electron Microscopy; X-ray diffraction;

机译：准〜（TM）基板;金属粘合;透射电子显微镜;X射线衍射;

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Metal Bonding in SiC Based Substrates

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