The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation

摘要

The charge collection efficiency (CCE) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 10{sup}14 cm{sup}(-2) has been studied. Nuclear spectrometric techniques with 5.4 MeV α-particles were employed to test the detectors. The concentration of primarily created defects was estimated to be 4×10{sup}16 cm{sup}(-3), A strong compensation of SiC was observed, which allowed connection of the structure in the forward mode. The experimental data obtained were processed using a simple two-parameter model of signal formation. The model makes it possible to separate the contributions of electrons and holes to the CCE. An additional irradiation at a fluence of 2×10{sup}14 cm{sup}(-2) reduced the CCE value by a factor of 2 and gave rise to polarization. The latter indicates that radiation-induced centers are not only actively involved in carrier localization (with a decrease in the lifetime), but also in transformation of the electric field within the detector.