Hamilton-Jacobi equation with non-convex Hamiltonians in three dimensional level set simulations of the wet etching of silicon

摘要

In this paper we have shown that profile evolution during anisotropic wet etching of silicon can be described by the non-convex Hamiltonian arising in the Hamilton-Jacobi equation for the level set function. Angular dependence of the silicon etching rate is determined on the basis of the silicon crystal symmetry properties.