Simulation of the total Non Ionizing Dose for organic photovoltaic cell P3HT:PCBM in space radiation environment and the degradation based on the Displacement Damage Dose.

摘要

Nowadays the technology that has attracted the attention of many companies, academies and research centres is on the organic photovoltaic (OPV) for solar cells. The development of materials used in these cells has had a rapid interest since the discovery of its potential use, because they combine common plastics properties, however, they are flexible, non-polluting and of low weight. One of the most OPV cell studied has been the P3HT:PC6iBM where P3HT is an organic and plane oligomer as the donor molecule and PCBM is the most studied acceptor material. Also, exist a lot of papers about its function but just in the earth but its necessary to know space environment effects on the key parameters of the OPV cells, specifically radiation damage. Therefore is such great interest the theoretical study of the space radiation environment interaction with the OPV cell based on the P3HT:PC_(61)BM through the displacement damage dose method due to the presence of a large number of high energy species in organic photovoltaic cell performance for a specific space mission based on the International Space Station (ISS) orbit to determinate their viability of its potential use for space applications. The present work focuses on simulations with the SPENVIS software for the theoretical radiation conditions on the ISS during a one-year space mission to assess the damage of displacement per dose (Dd) in the PC_(61)BM:P3HT generated by exposure to trapped particles: protons and electrons, based on a physical amount called non-ionizing energy loss (NIEL), which is the speed at which the energy is transferred from the particle irradiated to the target lattice through non-ionizing events. Finally, a total non ionizing dose (NID) for the thickness of the layers of 110 nm is shown in the results of the PCBM was 1.05x10~9 MeV/g, it was greater than the P3HT Total NID of 8.03x10~8 MeV/g. Therefore, the effects generated by radiation more significant changes in the PCBM are associated with the