We fabricated ultra high power ultraviolet (UV) light-emitting diodes (LEDs), whose emission wavelength is 365 nm. UV LED epilayers were grown on low threading dislocation density (TDD) GaN templates with sapphire substrates, and then the GaN templates and sapphire substrates were removed using laser-induced lift-off and polishing techniques. Additionally, to enhance the extraction efficiency, this LED chip used a higher reflectance Ag p-type electrode and patterned surface. As a result, we obtained the low self-absorption and low-TDD LEDs with practical high power and high quantum efficiency.
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