High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics

摘要

255/280/310 nm deep ultraviolet light-emitting diodes (DUV LEDs) suitable for high-current operation are reported. Newly developed 1 mm sized chips are installed in a commercial package with a two-series configuration. At a forward current of 350 mA, we measured powers of 45.2, 93.3, and 65.8 mW for the 255, 280, and 310 nm LEDs, respectively. The corresponding external quantum efficiencies per serial circuit were 1.3, 3.0, and 2.4%, and successful chip scalability was demonstrated. The 50% lifetime of the 280 nm LED die was estimated to be 3000 h at a junction temperature of 30 ℃.