tantalum compounds; dielectric thin films; Ge-Si alloys; plasma CVD coatings; electrical conductivity; leakage currents; carrier density; current density; interface states; Schottky effect; semiconductor-insulator boundaries; electrical properties; high-k Ta/sub 2/O/sub 5/ gate dielectrics; strained Ge-rich layers; tantalum pentaethoxide; plasma enhanced chemical vapor deposition; high frequency capacitance-voltage techniques; high frequency conductance-voltage techniques; high frequency current-voltage techniques; fixed oxide charge density; interface state density; leakage current; Schottky emission; stress induced leakage current;
机译:宽带隙高k Y_2O_3作为钝化中间层,用于增强具有高k HfTiO栅极电介质的n-Ge金属氧化物半导体电容器的电性能和高场可靠性
机译:原子层沉积的TaC_y金属栅极:对HfO_2高k电介质的微观结构,电性能和功函数的影响
机译:沉积在应变SiGe层上的堆叠栅电介质(SiO_2 / ZrO_2)的电性能
机译:应变富Ge层上高k Ta / sub 2 / O / sub 5 /栅极电介质的电性能
机译:通过原子层沉积进行金属栅/高k电介质堆叠工程:材料问题和电性能。
机译:多晶化对高k电介质的纳米级电性能的影响
机译:氧分压对在应变SiGe上通过脉冲激光沉积生长的HfAlO高k栅极电介质的结构和电特性的影响