A wideband 95–140 GHz high efficiency PA in 28nm CMOS

摘要

This paper presents a D-band PA on 28nm CMOS demonstrating excellent gain power dissipation and bandwidth tradeoffs. It features above 10 dB gain in the frequency range 95-140 GHz while drawing 30 mA from a 1.1-V supply and 0dBm P1dB & 7dBm saturation power. The use of low K transformers enables an increase in PA BW without power and area penalty. A modified transistor core layout boosts PA gain by 0.5dB per stage. PA die area with pads is 0.55×0.4 mm and without pads 0.4×0.2 mm.