Intel Corp., Haifa, Israel;
CMOS integrated circuits; millimetre wave power amplifiers; wideband amplifiers; CMOS; D-band PA; PA gain; bandwidth tradeoff; complementary metal oxide semiconductor; frequency 95 GHz to 140 GHz; power dissipation; saturation power; size 28 nm; transistor core layout; voltage 1.1 V; wideband high efficiency power amplifier; CMOS integrated circuits; CMOS technology; Frequency measurement; Gain; Layout; Transformer cores; Transistors; Cross couple; D-band; PA; PAE; low-K;
机译:适用于中国超宽带标准的6-9 GHz超宽带CMOS PA
机译:具有晶体管多端口波形整形功能的45nm CMOS-SOI中的无缓冲宽带倍频器,可实现25%的漏极效率和46–89 GHz的瞬时带宽
机译:适用于3至5 GHz超宽带(UWB)应用的高效CMOS功率放大器
机译:28nm CMOS中的宽带95-140 GHz高效PA
机译:对集成在CMOS芯片上的140GHz天线的研究。
机译:宽带全可编程双模CMOS模拟前端用于电阻抗谱
机译:31.2采用90nm CmOs的60GHz 1V + 12.3dBm变压器耦合宽带功率放大器