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CD Metrology for the 45nm and 32nm Nodes

机译:45nm和32nm节点的CD计量

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One of the many technology decisions facing the semiconductor industry for the 45 nm node (and beyond) is the selection of the best critical dimension (CD) metrology equipment to meet the needs of process equipment suppliers and semiconductor manufacturers. In an effort to address this need we fabricated advanced metrology structures using the Nanowriter e-beam writing tool at the Center for X-Ray Optics (CXRO) at Lawrence Berkeley National Laboratory. The structures include lines and holes both in resist and etched into substrates. The smallest isolated CDs are 16 nm, while the smallest holes are less than 50nm. We used these samples to characterize a variety of metrology technologies. In this paper we discuss the capability of those technologies to measure structures having dimensions representative of the 45 nm and 32 nm nodes.
机译:面对45nm节点(及更超越)的半导体行业面临的众多技术决策之一是选择最佳关键尺寸(CD)计量设备,以满足流程设备供应商和半导体制造商的需求。在努力解决这一切,我们需要在劳伦斯伯克利国家实验室的X射线光学(CXRO)中心,在X射线光学(CXRO)中心的X射线电子束写入工具中制造了先进的计量结构。该结构包括抗蚀剂的线和孔并蚀刻到基板中。最小的孤立CD为16 nm,而最小的孔小于50nm。我们使用这些样本来表征各种计量技术。在本文中,我们讨论了这些技术来测量具有45nm和32nm节点的尺寸的结构的能力。

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