MOS-transistors on the Si:Ho in the technology of SHF-devices

摘要

MOSFET-transistors are active elements of SHF integrated circuits. The SHF-transistor parameters optimization method has been designed. It is shown that holmium doping of silicon can be useful in the technology of SHF-devices. The use of silicon doped by holmium allows the improving of the characteristics of MOS structures.