首页> 外文会议>Conference on organic light-emitting materials and devices >Hole and electron transport in poly(9, 9-dioctylfluorene) and poly(9, 9-dioctylfluorene-co-benzothiadiazole)
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Hole and electron transport in poly(9, 9-dioctylfluorene) and poly(9, 9-dioctylfluorene-co-benzothiadiazole)

机译:聚(9,9-二辛基氟烯)和聚(9,9-二辛基氟烯-co-苯并噻唑)中的孔和电子传输

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Time-of-flight photocurrent (TOF) measurements on the blue emitting electroluminescent polymer poly(9,9-dioctylfluorene) (PFO) show that the room temperature hole mobility can vary from 10~(-2) to 5x10~(-5) cm~2/Vs depending on how the polymer films are prepared. It also undergoes irreversible increases when the samples are annealed. These results can be related to PFOs complex phase behaviour and show the importance of understanding and controlling the polymer film structure for device applications. We also present new TOF measurements on the green emitting electroluminescent polymer poly(9, 9-dioctylfluorene-co-benzothiadiazole) (BT). Previous TOF measurements have shown that BT exhibits dispersive electron transport and that holes are very heavily trapped, no hole transport signal being measurable using this technique. The new TOF measurements on a recently synthesized batch of BT show less dispersive electron transport with a mobility of 10~(-3) cm~2/Vs as well as non-dispersive hole transport with a mobility of 2x10~(-3) cm~2/Vs. This new batch therefore exhibits the highly desirable property of both good electron and hole transport in the same electroluminescent polymer. It is proposed that this is due to a change in the molecular weight and/or polydispersity of the material and indicates the importance of further development of relatively well known materials. TOF measurements of the variation of the hole and electron mobility with temperature are examined within the framework of the Gaussian disorder model.
机译:在蓝色发光电致发光聚合物聚(9,9-二辛基氟烯)(PFO)上的飞行时间光电流(TOF)测量表明,室温孔迁移率可从10〜(2)至5×10〜(-5)变化Cm〜2 / Vs取决于如何制备聚合物薄膜。当样品退火时,它还经历不可逆的增加。这些结果与PFOS复杂相行为有关,并显示了理解和控制器件应用的聚合物膜结构的重要性。我们还在绿色发光电致发光聚合物聚(9,9-二辛基氟烯-Co-苯并噻唑)(Bt)上呈现新的TOF测量。以前的TOF测量表明,BT表现出分散电子传输,并且该孔被捕获非常大,没有空穴传输信号使用该技术可测量。最近合成的BT上的新TOF测量显示较少的分散电子传输,迁移率为10〜(3)cm〜2 / Vs以及具有2x10〜(-3)厘米的迁移率的非分散空穴传输〜2 / vs。因此,这种新的批料在相同的电致发光聚合物中表现出良好的电子和空穴传输的高望值。建议这是由于材料的分子量和/或多分散性的变化,并表明了进一步发展相对众所周知的材料的重要性。在高斯紊乱模型的框架内检查孔和电子迁移率的变化的TOF测量。

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