power MESFET; semiconductor device models; thermal resistance; thermal management (packaging); silicon compounds; wide band gap semiconductors; SiC MESFET design; power MESFET; RF source; power amplifiers; wireless telecommunication systems; phased-array radar systems; material properties; electrical field; electron saturation velocity; thermal conductivity; self-heating; DC performance; gate fingers; 2D electro-thermal simulations; ISE-TCAD; drain current; transistors; power density; thermal simulations; FEMLAB; junction temperature; gate periphery; die backside; packaging thermal resistance; die thermal resistance; 4.5 W; SiC;
机译:大功率SiC MESFET CLASS E功率放大器的非对称轴滤波器设计
机译:栅极长度与SiC-MESFET的RF特性的关系-短通道SiC-MESFET的RF特性
机译:栅极长度与SiC-MESFET的RF特性的关系-短通道SiC-MESFET的RF特性
机译:大功率SiC MESFET设计的散热问题
机译:硅(Si)基板上的单向常态垂直碳化硅(3C-SiC)MESFET。
机译:改进的DRUS 4H-SiC MESFET具有高功率附加效率
机译:使用碳化硅MESFET的超宽带5 W混合功率放大器设计