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NEXT GENERATION LITHOGRAPHY AND THE MANUFACTURING FACILITY

机译:下一代光刻和制造设施

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To keep pace with Moore's law and the International Technology Roadmap for Semiconductors (ITRS), semiconductor manufacturers will have to utilize equipment with capabilities that go beyond that of today's 193nm optical lithography. The next generation of optical lithography is expected to be 157nm. While some new challenges are presented with each new generation of optical lithography, they are historically familiar issues. What lies beyond the use of 157nm lithography is unknown territory. The implementation of a next generation lithography (NGL) will have undetermined impacts upon the facility. To date, much has been written about the NGL of choice. The industry seems to be leaning towards taking a path of 248nm-193nm-157nm-extreme ultra-violet lithography (EUVL). Some effort has also been given to surveying the industry in regards to when they believe they will utilize each NGL with no clear consensus. Furthermore, little attention has been paid to the facility impacts from these NGL's. An examination of the lithography demands laid out in the ITRS, along with the proposed lithography solutions at each node, allows the facility personnel to determine what manufacturing processes they need to be prepared to accommodate at each node. Facility impacts need to be determined for each process so that the facilities may be prepared. Issues concerning new process chemicals, safety, footprint, height, weight, and vibration criteria are all key issues in facility design. These impacts have the ability to affect the construction process which is often part of the product-to-market time segment for new products. Delays in constructing the manufacturing facility could lead to a significant loss in market share. The research objectives are to identify future process technologies, determine when these technologies will be introduced into the facility, and determine what impacts this will have upon the facility. The purpose of this paper is to identify impacts to facility design and construction stemming from the eventual implementation of new process technologies, specifically the next generation lithography.
机译:为了跟上摩尔定律和国际半导体技术蓝图(ITRS)的步伐,半导体制造商将不得不利用设备与超越,今天的193纳米光刻技术的能力。光学光刻术的下一代预期为157nm的。虽然一些新的挑战都随着每一代新光刻技术的,他们是历史上熟悉的问题。以后如何使用157纳米光刻技术是未知的领域。下一代光刻(NGL)的实施,将有在工厂不确定的影响。迄今为止,已经有很多文章关于选择的NGL。该行业似乎是采取248纳米,193纳米,157纳米极紫外光刻(EUVL)的路径倾斜。一些努力也被赋予调查行业的问候时,他们相信他们将利用各自NGL没有明确的共识。此外,很少有人注意支付给这些NGL的设施的影响。在ITRS摆出来,在每个节点所提出的解决方案,光刻以及光刻要求的检查,使设施人员,以确定他们所需要的制造工艺,以准备在每个节点,以适应。设施的影响需要为每一个工艺,使设备可以准备待确定。关于新的制程化学品,安全,足迹,身高,体重问题和振动标准是在设施设计的所有关键问题。这些影响有可能影响到施工过程,往往是新产品的产品推向市场的时间段的一部分的能力。在构建制造工厂的延误可能导致市场份额显著损失。研究目标是确定未来的工艺技术,确定何时这些技术将被引入到设备,并确定这会对在工厂什么影响。本文的目的是确定影响到设施的设计和建设从最终实施新的工艺技术所产生,特别是下一代光刻技术。

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