Pulsed Time-of-Flight 3D-CMOS Imaging Using Photogate-Based Active Pixel Sensors

摘要

A novel time-of-flight (ToF) 3D-image sensor based on photogate (PG) active pixel structures fabricated in a standard 0.35μm CMOS process is presented. Distance measurements are performed using a pulsed near-infrared (λ=905nm) laser with pulse widths of 30ns to 60ns for distance measurements up to 9m. The developed ToF pixel consists of a photogate (A_(PG)=30×30μm~2) and four floating diffusion (FD) readout nodes, which enable the detection of reflected laser pulse delay and efficient ambient light suppression. Our fabricated sensor contains 4×16 pixels and exhibits a dynamic range of 56dB and a noise equivalent power of 4.46W/m~2 using a single laser pulse.