Bandgap Bowing In InSb_(1-x)N_x Investigated With A New Fourier Transform Modulated Spectroscopy Technique For The Mid-Infrared

摘要

Using an FTIR-based photo-modulated transmission spectroscopic technique a red-shift in bandgap has been observed at room temperature for an InSb1–xNx ternary alloy, relative to binary InSb, and determined to be approximately around 16meV (10%), corresponding to an incorporated nitrogen concentration of 0.1%.