Influence Of Thermal Annealing On Initial Zn Layers And The Properties Of ZnO Thin Films Grown By PA-MBE

摘要

ZnO thin films were grown on p-type Si (100) by plasma-assisted molecular beam epitaxy (PA-MBE). Before the growth of the ZnO thin films, the initial Zn layers were deposited on the Si substrates. In order to investigate the effects of thermal annealing, the initial Zn layers were annealed at the temperature range from 500 to 700 deg C for 30 min under oxygen ambient. The properties of the ZnO thin films with annealed initial Zn layers have been investigated by X-ray diffraction (XRD), room temperature (RT) photoluminescence (PL), and scanning electron microscopy (SEM).