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Evaluation of Carbon Interstitial in C-ion Implanted ZnO Bulk Single Crystals by a Nuclear Reaction Analysis Study: An Origin of Low Resistivity

机译:核反应分析研究中C离子植入ZnO散装单晶的碳含水性评价:低电阻率的起源

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Nuclear reaction analysis (NRA) of carbon-implanted ZnO bulk single crystals (carbon concentration: 1.5 X 10~(20) cm~(-3)), in conjunction with the channeling technique, using the ~(12)C(d,p)~(13)C and ~(16)O(d,p)~(17)O reactions shows the presence of the interstitial carbon (C_(i)) and the occupancy of substitute sites of oxygen atoms. These results suggest that the variation in resistivity from the order of 10~(4) (OMEGA)cm (for un-implanted samples) to that of 10 (OMEGA)cm (for as-implanted ones) is attributed to the C_(i) and/or its complex defects, which would act as a shallow donor in ZnO.
机译:碳植入ZnO散装单晶(碳浓度:1.5×10〜(20)cm〜(-3)),使用〜(12)c(d, p)〜(13)C和〜(16)o(d,p)〜(17)O反应显示间质碳(c_(i))和氧原子替代位点的占用位点。这些结果表明,从10〜(4)(Omega)cm(用于未植入的样品)至10(ω)cm(用于植入的样品)的电阻率的变化归因于C_(i /或其复杂的缺陷,它将作为ZnO的浅供体。

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