Temperature Dependence of Current-Voltage Characteristics of Au/Ga_(0.51)In_(0.49)P Schottky Barrier Diodes

摘要

Current-Voltage (IV) measurements on Au / Ga_(0.51)In_(0.49)P Schottky barrier diodes in the temperature range 10 - 320 K were done. The Ga_(0.51)In_(0.49)P layer was grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The Cheung's method is used to estimate the value of a possible series resistance Rs and the ideality factor n. It is found that Rs is around 42 OMEGA at 10 K and decreases with temperature to around 7 OMEGA at 320 K. The IV curves were corrected for R_(S). The ideality factor also decreases with increasing temperature, from 45.21 at 10 K to 1.99 at 320 K. It is well explained by the To effect. The saturation current and the apparent barrier height were calculated by using the thermionic emission (TE) theory, as function of temperature. The zero-bias barrier height at 320 K was 0.554 eV. It is well explained by the Schottky model. From reverse-bias IV graphs, it is found that the experimental carrier density (rho) value increases with temperature.