We address the most critical issue in nano devices: degradation due to lattice heating. We give recommendations on the lattice heating for different generations of FD SOI devices ranging between 25 nm and 100 nm channel length. We find that in small devices, due to the velocity overshoot effect lattice heating has less degrading effect on the device electrical characteristics. Silicon on diamond is found to be a better device structure in terms of heat transport. We also consider alternative device technologies, such as dual gate devices and find that lattice heating does not have that much degrading effect compared to the current enhancement that these structures offer.
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