Strain-enhanced charge carrier confinement in quantum dots and wires fabricated by cleaved edge overgrowth

摘要

We present numerical calculations of strained and asymmetric quantum dots and wires fabricated by Cleaved Edge Overgrowth. The charge carrier confinement was optimized using an evolutionary optimization algorithm. The simulations show confinement energies of up to 107 meV for strained quantum wires and 13 meV for asymmetric quantum dots.