The diffusion in the processing chamber of a plasma, created by an ECWR source, was studied. It was found that the axial density and plasma potential profiles can be modelled by using the assumption of a spherical expansion from the plasma source. By adding a grounded grid at the source output, plasma density, potential and electron temperature in the diffusion region (Region II) are modified according to the plasma density and potential in the plasma source (Region I). The ion velocity distribution function (IVDF) has a double peak structure corresponding to the plasma potential in the diffusion region and in the plasma source, respectively.
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