HgCdTe photodiodes current-voltage characteristics simulation

机译：HGCDTE光电二极管电流 - 电压特性模拟

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Different current mechanisms in HgCdTe p-n junctions have been analyzed. Current-voltage characteristics of photodiodes in HgCdTe epitaxial layers formed by different epitaxial methods are measured and simulated. The numerical simulation of photodiodes current-voltage characteristics allows to evaluate HgCdTe material parameters and improve Focal Plane Arrays technology.

机译：已经分析了HGCDTE P-N结中的不同电流机制。测量并模拟不同外延方法形成的HGCDTE外延层中的光电二极管的电流 - 电压特性。光电二极管电流电压特性的数值模拟允许评估HGCDTE材料参数并改善焦平面阵列技术。

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《International conference on photoelectronics and night vision devices》|2003年||共9页
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K.O.Boltar; N.I.Iakovleva; SPIE-The International Society for Optical Engineering;
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中图分类各种摄影技术;
关键词
HgCdTe; FPA; photodiode; simulation;

机译：HGCDTE;FPA;光电二极管;模拟;

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4. HgCdTe photodiodes current-voltage characteristics simulation [C] . K.O.Boltar, N.I.Iakovleva, SPIE-The International Society for Optical Engineering International conference on photoelectronics and night vision devices . 2003

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HgCdTe photodiodes current-voltage characteristics simulation

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