128x128 and 288x384 InSb array photodetective assemblies for 3/5 μm spectral range

摘要

This paper explains the technologies used for high-performance Infrared Focal Plane Arrays (IRFPAs) based on InSb -p-MOS hybrid multiplexers. Mid-Wavelength Infrared (MWIR) photodiode arrays are fabricated using thin-base technology. Each photodiode array consists of 288x384 and 128x128-element p+-on-n diodes formed by Be~+- implantation. The diodes had a typical zero-bias resistance of 0.5 GΩ. p-MOS Rolling Read Out Integrated Circuits (ROIC) with two outputs were used. Integrated Dewar Assembly type Integrated Stirling was used for cooling FPA. The Infrared Focal Plane Arrays had a typical Noise Equivalent Power (6/8)10~(-13) W/pixel at 2·10~(-3) s storage time.