LWIR 2*56 focal plane array for time delay and integration

摘要

FPA architecture and technology developed by RD&P Center ORION based on planar HgCdTe photodiode arrays and cooled silicon integrated readout circuits is presented. Photovoltaic detectors array made on mercury cadmium telluride (MCT) liquid phase epitaxy (LPE) layer and silicon readout circuits are linked by indium bumps on sapphire interconnection substrate. Cooled silicon readout circuits have been made by n-MOS technology with no TDI stages at focal plane. For 8-12 μm wavelength range detectivity is (5-10)*10~(10) cmW~(-1)Hz~(1/2) for 2x256 FPA with two TDI elements.