TRANSIENT ELECTRONIC PROCESSES IN MIS-PHOTO TARGETS OF VIDICONS SENSITIVE IN THE MIDBAND INFRA-RED RADIATION

摘要

The sensitivity of MIS-photo targets in conditions of thermodynamic nonequilibrium reaches more significant values in the midband of IR radiation at higher temperatures than semiconductor structures (photoresistors and p-n transitions) working in conditions of thermodynamic equilibrium. It may permit to create new devices photosensitive in the middle and in the far bands of IR radiation.